The 40 V MOSFET is a vital constructing block in lots of automotive purposes similar to motor management for energy steering, transmission management, ABS, ESC, fan velocity management, and reverse battery safety, amongst others.
Seeking to assist automotive designers save board space and energy, Diodes Integrated not too long ago launched its latest product: a dual 40 V MOSFET package. The DMT47M2LDVQ can substitute two discrete MOSFETs to cut back the board house whereas additionally providing what the corporate claims are the bottom trade RDS(on) for its configuration.
On this article, we’ll stack this gadget up towards some opponents, particularly Nexperia’s BUK9J0R9-40H and Toshiba’s TPWR7940PB.
Diode’s Integrated’s DMT47MLDVQ
When conduction losses at a most working VGS of 10 V and a drain present of 30.2 A, Diodes Integrated’s DMT47MLDVQ provides an RDS(on) as little as 10.8 mΩ. Below a 4.5V VGS and a drain present of 25.6 A, the gadget sees a excessive RDS(on) reaching as much as 15 mΩ.
The DMT47MLDVQ MOSFETs. Picture used courtesy of Diodes Integrated
Switching loss is immediately associated to the period of time required to change the MOSFET, which in flip is immediately associated to the cost on the gate. With respect to this, the gadget claims a typical gate cost of 14.0 nC at a VGS of 10 V and an ID of 20 A.
The gadget additionally suits two MOSFETs right into a 3.3 mm x 3.3 mm bundle, aiming to lower board house and save space and price for designers.
A counterpart to the brand new Diodes Integrated’s 40 V MOSFET is Nexperia’s BUK9J0R9-40H—a single MOSFET that includes some spectacular specs. The gadget is available in a 4.58 mm x 5.13 mm bundle, making it bigger than Diode’s product.
RDS(on) vs. VGS for BUK9J0R9-40H. Picture used courtesy of Nexperia
The gadget has an especially low RDS(on) of 0.94 mΩ at a VGS of 10 V and drain present of 25 A. Whereas it’s only a single MOSFET, if we wished to check it to Diode Integrated’s new product (which is a twin MOSFET), we will create a worst-case state of affairs calculation.
If we assume two of those units in sequence, we will add their RDS(on) values and see a worse case 1.88 mΩ RDS(on)—nonetheless considerably lower than the DMT47MLDVQ and at a decrease present worth.
With respect to switching loss, this gadget from Nexperia has a typical gate cost of 12.7 nC at VGS of 4.5 V and an ID of 20 A. That is much less environment friendly than the comparable RDS(on) spec as a result of it’s at a significantly decrease gate-to-source voltage, however a slightly smaller gate cost.
Toshiba’s gadget, the TPWR7940PB, can also be a single AEC-Q101 certified MOSFET. It is available in a 5 mm x 6 mm bundle, bigger than each Diode Integrated’s and Nexperia’s choices.
RDS(ON) and ID of Toshiba’s TPW1R104PB. Picture used courtesy of Toshiba (downloads as PDF)
At a VGS of 10 V and an ID of 60 A, this gadget provides an RDS(on) of .95 mΩ. This can be a comparable worth to Nexperia’s gadget however at a considerably increased present. Moreover, at a VGS of 10 V and a drain present of 120 A, we see a gate cost of 55 nC. That is considerably increased than each different units, implying bigger switching losses.
After evaluating these three units, we see that whereas the DMT47MLDVQ MOSFETs might not have the bottom conduction losses (RDS(on)) or switching losses (gate cost), it nonetheless provides some vital advantages.
For starters, this gadget has a smaller bundle than each different opponents we checked out—and it incorporates two MOSFETs inside that space. With this in thoughts, we see it’s simply probably the most space-efficient of the three units. It’s but to be seen if there are different dual-channel units as small as Diodes Integrated’s product that additionally supply decrease RDS(on).
Relying in your software wants, particularly when space is a major concern, this new gadget might be a helpful possibility when deciding on 40 V MOSFETs.